A temperature compensation concept suitable for rapid thermal processing (RTP) with a nonuniform wafer temperature distribution is proposed in this work. Concentric Si rings with different diameters are placed on planar quartz or Si susceptors and are regarded as patterned susceptors for temperature compensation. We put monitor wafers on the patterned susceptor and see the effect of the patterned susceptor on the oxide thickness uniformity of the monitor wafers. The Si rings work as radiation barriers when placed on the quartz susceptor, but as heat conduction media when placed on the Si susceptor. By properly arranging the Si rings on the planar susceptors, the monitor wafers' oxide thickness uniformity can be improved.

A new temperature compensation concept suitable for rapid thermal processor (RTP) with non-uniform temperature distribution was proposed in this work. Concentric Si rings with different diameters are placed between wafer and planar susceptor and are regarded as a patterned susceptor. By properly arranging the Si rings on the planar quartz or Si susceptor, one can make the semiconductor wafers have more uniform temperature distribution in a non-uniform temperature RTP system. This is a very simple and cheap method for solving the temperature non-uniformity problem in the RTP system.