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RESULTS AND DISCUSSIONIssues associated with the integration of p-type band-edge Through accurate EWF extraction, a wide variety of metal (5.0-5.2eV) effective work function (EWF) electrodes are identified electrodes have been evaluated. Figure 2 compares EWF on high-K and discussed. The Fermi-level (Ef) pinning effect traditionally used and SiO2. We find a similar span of EWF on high-K and SiO2 for the to explain the lowering of p-MOS EWF is believed not to be an material systems evaluated (4.2-5.0eV), even after a 1000°C anneal, intrinsic limitation. However, a new described as the "flatband (Vf) suggesting no indications of Ef pinning. Detailed comparison and rolloff effect" is shown to be the dominant factor.calculation of the results with the MIGS intrinsic model also suggests that intrinsic Efpinning by MIGS is not the limiting factor for p-type INTRODUCTION metal gates [20]. Scaling challenges require using metal gate electrodes to replace

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