The dielectric, ferroelectric, and piezoelectric properties of chemical solution deposited xBiInO3–(1−x)PbTiO3 (0.10≤x≤0.35) thin films on platinized silicon substrates were investigated. Using a PbTiO3 seed layer, phase pure xBiInO3–(1−x)PbTiO3 (0.10≤x≤0.35) thin films were prepared. For a 470 nm thick 0.15BiInO3–0.85PbTiO3 film, the room temperature permittivity was 650, while the dielectric loss tangent was below 2%. The coercive field and remanent polarization were 73 kV/cm and 22 μC/cm2, respectively. The ferroelectric transition temperatures of the xBiInO3–(1−x)PbTiO3 (x=0.10–0.20) films were all in excess of 550 °C. For x=0.15, the e31,f piezoelectric coefficient was −2.7 C/m2.

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BiFeO 3 -Bi ( Zn 1 / 2 Ti 1 / 2 ) O 3 (BF-BZT) ceramics were made by a solid state reaction method. Crystal structure and microstructure were observed. Leakage currents were much reduced with BZT doping in BF. Dielectric constants of BF-BZT increased as frequency is decreased. Two distinctive relaxations were observed at about 500 kHz and 3 Hz. Ferroelectriclike hysteresis loops were observed in BF with low electric field and 2.5 and 5 mol % BZT doped ceramics.