Hafnia-based ferroelectric memory devices with excellent ferroelectricity, low power consumption, and fast operation speed have attracted considerable interest with the ever-growing desire for nonvolatile memory in flexible electronics. However, hafnia films are required to perform a high temperature (>500 °C) annealing process for crystallization into the ferroelectric orthorhombic phase. It can hinder the integration of hafnia ferroelectric films on flexible substrates including plastic and polymer, which are not endurable at high temperatures above 300 °C. Here, we propose the extremely low-temperature (∼250 °C) process for crystallization of Hf 0.5 Zr 0.5 O 2 (HZO) thin films by applying a focused-microwave induced annealing method. HZO thin films on a flexible mica substrate exhibits robust remnant polarization (2P r ∼ 50 μC/cm 2 ), which is negligibly changed under bending tests. In addition, the electrical characteristics of a HZO capacitor on the mica substrate were evaluated, and ferroelectric thin film transistors (Fe-TFTs), using a HZO gate insulator, were fabricated on mica substrates for flexible synapse applications. Symmetric potentiation and depression characteristics are successfully demonstrated in the Fe-TFT memory devices, and the synaptic devices result in high recognition accuracy of 91.44%. The lowtemperature annealing method used in this work are promising for forming hafnia-based Fe-TFT memory devices as a building block on a flexible platform.

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The development of Cu-based alloys with high-mechanical properties (strength, ductility) and electrical conductivity plays a key role over a wide range of industrial applications. Successful design of the materials, however, has been rare due to the improvement of mutually exclusive properties as conventionally speculated. In this paper, we demonstrate that these contradictory material properties can be improved simultaneously if the interfacial energies of heterogeneous interfaces are carefully controlled. We uniformly disperse γ-Al2O3 nanoparticles over Cu matrix, and then we controlled atomic level morphology of the interface γ-Al2O3//Cu by adding Ti solutes. It is shown that the Ti dramatically drives the interfacial phase transformation from very irregular to homogeneous spherical morphologies resulting in substantial enhancement of the mechanical property of Cu matrix. Furthermore, the Ti removes impurities (O and Al) in the Cu matrix by forming oxides leading to recovery of the electrical conductivity of pure Cu. We validate experimental results using TEM and EDX combined with first-principles density functional theory (DFT) calculations, which all consistently poise that our materials are suitable for industrial applications.

A self-organized n+/n homojunction is proposed to achieve ultrahigh performance of thin film transistors (TFTs) based on an amorphous (Zn,Ba)SnO3 (ZBTO) semiconductor with sufficiently limited scattering centers. A deposited Al layer can induce a highly O-deficient (n+) interface layer in the back channel of a-ZBTO without damaging the front channel layer via the formation of a metal-oxide interlayer between the metal and back channel. The n+ layer can significantly improve the field-effect mobility by providing a relatively high concentration of free electrons in the front n-channel ZBTO, where the scattering of carriers is already controlled. In comparison with a Ti layer, the Al metal layer is superior, as confirmed by first-principles density functional theory (DFT) calculations, due to the stronger metal-O bonds, which make it easier to form a metal oxide AlOx interlayer through the removal of oxygen from ZBTO. The field-effect mobility of a-ZBTO with an Al capping layer can reach 153.4 cm2/Vs, which is higher than that of the pristine device, i.e., 20.8 cm2/Vs. This result paves the way for the realization of a cost-effective method for implementing indium-free ZBTO devices in various applications, such as flat panel displays and large-area electronic circuits.

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