Recently, a lot of effort has been focused on improving the performance and exploring the electric properties of graphene. This article presents a summary of chemical doping of graphene aimed at tuning the electronic properties of graphene. p-Type and n-type doping of graphene achieved through surface transfer doping or substitutional doping and their applications based on doping are reviewed. Chemical doping for band gap tuning in graphene is also presented. It will be beneficial to designing high performance electronic devices based on chemically doped graphene.

Two donor-acceptor (D-A) copolymer PDVTs based on diketopyrrolopyrole and (E)-2-(2-(thiophen-2-yl)vinyl)thiophene (TVT) units are synthesized for solution-processed field-effect transistors (FETs). The highly π-extended TVT units strengthen the coplanarity of the polymer backbone. FETs based on PDVTs show high mobilities above 2.0 cm(2) V(-1) s(-1) with a current on/off ratio of 10(5)-10(7) , high shelf storage, and operation stability.