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Laser Voltage Imaging (LVI) is a new application developed from Laser Voltage Probing (LVP). Most LVP applications have focused on design debug or design characterization, and are seldom used for global functional failure analysis. LVI enables the failure analysis engineer to utilize laser probing techniques in the failure analysis realm. In this paper, we present LVI as an emerging FA technique. We will discuss setting up an LVI acquisition and present its current challenges. Finally, we will present an LVI application in the form of a case study.

This paper demonstrates a methodology for chip level defect localization that allows complex logic nets to be approached from multiple perspectives during failure analysis of modern flip-chip CMOS IC devices. By combining chip backside deprocessing with site-specific plasma Focused Ion Beam (pFIB) low angle milling, the area of interest in a failure IC device is made accessible from any direction for nanoprobing and Electron Beam Absorbed Current (EBAC) analysis. This methodology allows subtle defects to be more accurately localized and analyzed for thorough root-cause understanding.