We present a high resolution study of the ferromagnetic layer thickness dependence of exchange bias field (H EB) and coercivity (H C) in IrMn/Co and FeMn/Co bilayers using the magneto-optical Kerr effect. Samples are sputtered wedges on silicon with Co thicknesses ranging from 1 to 17 nm. The IrMn/Co ͑with exchange bias interface energy of ϳ0.14 erg/cm 2 ͒ shows square loops, a smooth increase in H EB with inverse thickness, and a complicated behavior for coercivity, perhaps due to competition with thickness dependent coercive mechanisms. The FeMn/Co ͑with exchange bias interface energy of ϳ0.059 erg/cm 2 ͒ shows more rounded loops, a plateau of H EB with decreasing thickness, and a smooth increase in coercivity with inverse thickness.

Symmetric and asymmetric double-shifted loops were observed at room temperature in epitaxial (002) Ir20Mn80/Co50Fe50 samples placed in a setting field applied along collinear and noncollinear directions with the deposition-field direction, respectively. A coherent rotation model with extra unidirectional exchange and uniaxial anisotropies induced by the noncollinear setting field is proposed to explain the asymmetric double-shifted loops. Due to the existence of the biaxial magnetocrystalline anisotropy, the noncollinear setting field results in two interfacial Ir20Mn80 spin orientations, where the major spins determine the direction to observe double-shifted loops and the minor spins determine the field-shift and the asymmetry of double-shifted loops.

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We investigated the reorientation of exchange anisotropy in the epitaxial (002) IrMn/CoFe bilayers. Transitions of exchange-bias field from a negative field to a positive field with increasing time scale were observed at room temperature. The negatively magnetized state combining with the strong magnetocrystalline anisotropy of CoFe may raise the probability that the interfacial spins of thin IrMn layers were thermally relaxed to the direction of CoFe magnetization; therefore, after a period of time, the exchange-bias direction was reversed. This process can be further enhanced when samples were placed under the setting field. The double-shifted magnetization curve observed in this system was used as a good indicator for the relaxation of interfacial spins of IrMn.