BackgroundHyperglycemia increases the risk of gastric cancer in H. pylori-infected patients. High glucose could increase endothelial permeability and cancer-associated signaling. These suggest high glucose may affect H. pylori or its infected status.We used two strains to investigate whether H. pylori growth, viability, adhesion and CagA-phosphorylation level in the infected-AGS cells were influenced by glucose concentration (100, 150, and 200 mg/dL).ResultsThe growth curves of both strains in 200 mg/dL of glucose were maintained at the highest optimal density after 48 h and the best viability of both strains were retained in the same glucose condition at 72 h. Furthermore, adhesion enhancement of H. pylori was significantly higher in 200 mg/dL of glucose as compared to that in 100 and 150 mg/dL (p < 0.05). CagA protein also increased in higher glucose condition. The cell-associated CagA and phosphorylated-CagA was significantly increased in 150 and 200 mg/dL of glucose concentrations as compared to that of 100 mg/dL (p < 0.05), which were found to be dose-dependent.ConclusionHigher glucose could maintain H. pylori growth and viability after 48 h. H. pylori adhesion and CagA increased to further facilitate the enhancement of cell-associated CagA and phosphorylated CagA in higher glucose conditions.

Selective-area Si implantation was performed on the surface of GaN films to form n+-GaN stripes for enhancing the production rate of hydrogen by photolysis of water.

This study demonstrates that selective-area Si implantation performed on the GaN templates instead of conventional dielectric layers, such as SiO2 or SiNx, serves as the mask layer for the epitaxial lateral overgrowth (ELOG) process. Although the substantial mask layer is absent on the templates, selective growth initially occurs on the implantation-free area and then evolves a lateral overgrowth on the Si-implanted area during the regrowth process. This selective growth is attributed to that the crystal structure of the Si-implanted area subjected to the high doses of ion bombardment produces an amorphous surface layer, thereby leading to a lattice mismatch to the regrown GaN layer. Microstructural analyses reveal that the density of the threading dislocations above the Si-implanted regions is markedly lower than the GaN layer in the implantation-free regions. Consequentially, UV LEDs fabricated on the Si-implanted GaN templates exhibit relatively higher light output and lower leakage current compared with those of LEDs grown on ELOG-free GaN templates.