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In this work, we demonstrated that the 5-nm-thick HfAlO x negative capacitance transistor (NCFET) with optimized Al doping can achieve a minimum 33 mV dec −1 subthreshold swing (SS), an ultralow I off of 7.44 fA μm −1 , and a high I on /I off ratio of 1.9 × 10 8 . The NC switching with sub-60 mV dec −1 SS can be implemented from V DS = 0.2 V to 0.8 V due to an ultralow off-state leakage current. The experimental results reveal that well-controlled Al doping in HfAlO x not only reduces off-state leakage of the transistor, but also improves the ferroelectric NC effect to achieve a sub-60 mV dec −1 switching under a favorably low sub-1 voltage. This scaled HfAlO x NCFET with optimized Al doping and fluorine defect passivation shows the great potential for the application of low power logic devices.

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