AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick (>15 m) AlN layers by metal-organic chemical vapor deposition with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices.

The coefficients of thermal expansion (CTEs) of single crystalline, monoclinic β-Ga2O3 were determined by employing high-resolution X-ray diffraction measurements. This work reports the CTE measurements on a single crystalline β-Ga2O3 substrate. The CTE values along the “a,” “b,” and “c” axes are 3.77 × 10−6 °C−1, 7.80 × 10−6 °C−1, and 6.34 × 10−6 °C−1, respectively, and the CTE of the angle β (the angle between the “a” and “c” axes) is determined to be 1.31 × 10−4 ° K−1. All CTE values reported here are linear under the temperature regime between room temperature and 1000 °C. All measurements were performed in a controlled nitrogen gas environment, and no surface degradation was observed after these measurements. Thermal strain calculations with different material combinations involving β-Ga2O3 are also presented relevant to both epitaxial and wafer bonding applications for Si, InP, 3C–SiC, 6H–SiC, GaN, and sapphire.

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