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Applicable nano metric titanium-titanium oxide line-titanium tunneling junction was fabricated with dual-facing target sputtering,micro-electronic optical lithography and atomic force microscope anodic oxidation.The thickness of titanium film of the fabricated junction was 3nm and the width of the titanium oxide line was 60.5nm.The I-V curve of the tunneling junction at room temperature clearly indicates the Coulomb blockade effect.

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In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully. A systematic depiction centers on the designs of material structure, device structure, photolithography mask, fabrication of device and the measurement and analysis of parameters. The fabricated GRTT has a maximum PVCR of 46 and a maximum transconductance of 8 mS. The work lays the foundation for further improvement on the performance and parameters of RTT.