Nano-crystalline silicon films were prepared from SiH4 diluted with hydrogen by plasma enhanced chemical vapor deposition at a pressure of 230 Pa. The effect of hydrogen dilution on their growth rate and crystalline properties were investigated. The experimental results indicate that the crystalline fraction and grain size increase with increasing hydrogen dilution ratio, and when the hydrogen dilution ratio increases to 99%, the crystalline fraction reaches 70%. The deposition rate decreases with increasing hydrogen dilution ratio, when the hydrogen dilution ratio decreases from 99% to 95%, the deposition rate of thin film increases from 0.3nm/s to 0.8nm/s.

New intercalated compounds Pd x NbSe 2 (x=0-0.17) were synthesized via solid-state reaction. They possess the parent structure of 2H-NbSe 2 and crystalize in the hexagonal space group of P6 3 /mmc. The intercalated Pd occupies the octahedral position in the van der Waals gaps of 2H-NbSe 2. Unit cell parameter c increases linearly with the Pd content, while a is nearly unchanged. The lattice parameter of Pd 0.17 NbSe 2 (a=b=0.34611(2) nm, c= 1.27004(11) nm) is identified by single crystal X-ray diffraction. The intercalated Pd stabilizes the crystal structure of NbSe 2 by connecting the adjacent Nb-Se layers with [PdSe 6 ] octahedra and leads to the enhanced thermostability in air. Temperature dependence of electric resistivity reveals that the residual resistivity ratio of Pd x NbSe 2 monotonically decreases with addition of the intercalated Pd content. The decreased superconducting critical temperature of Pd x NbSe 2 indicates the suppression effect of Pd intercalation on the superconductivity in the host NbSe 2 .

No abstract