In this work, we study the impacts of different types of strain relief layer (SRL) on dynamic on-resistance (Ron) degradation of GaN power devices on Si by back-gate ramping and vertical leakage measurement. Our study reveals that the SRL has important effects on the dynamic Ron. Compared with step-graded AlGaN SRL, the superlattice SRL possesses much more energy barriers, which can more effectively block the leakage of holes from GaN buffer and the injection of electrons from Si substrate. Enhancing the carrier blocking ability of SRL could contribute to the suppression of dynamic Ron degradation.

It has been established that hydrogen (H) plays a key role in p-type doping of GaN and it must be removed by dissociation of the Mg–H complex in order to achieve p-type conductivity. However, in carbon (C)-doped semi-insulating GaN, which is the core component of power electronic devices, the role of H, especially the formation and dissociation process of C–H defects, has remained to date a mystery. In this work, we provide a direct evidence for the interaction between H and C in the form of the CN−Hi complex in as-grown C-doped GaN. The complex can be dissociated into CN− and H+ after post-growth annealing. The activation energy is estimated to be about 2.3–2.5 eV from the temperature-dependent annealing experiments. Our study reveals that the CN−Hi complex plays an essential role in understanding the variation of optical and electronic properties of C-doped GaN.

We have investigated the interaction between carbon impurities and threading dislocations and their impact on the transport properties of GaN grown on Si substrates. The incorporation of carbon impurity was found to be associated with dislocation density, with a linear dependence. It indicates that the carbon may accumulate around the dislocations. The temperature-dependent Hall-effect measurement further confirmed that those carbon-decorated dislocations can act as acceptor-like traps, existing at every c-lattice spacing along a threading dislocation. The acceptor-like traps are important scattering centers and, thus, cannot be neglected. By reducing the density of the carbon-decorated dislocation via introducing a thick dislocation filtering layer to reduce the dislocation-related acceptor-like trap scattering, a record room-temperature electron mobility of 1090 cm2/V s with a carrier concentration of ∼2 × 1016 cm−3 for n--GaN on Si was achieved. Our results provide an effective approach to obtain high-quality n−-GaN on Si for vertical GaN based devices.

Carrier compensation traps in n−-GaN drift layers grown on Si substrates were investigated using high-temperature deep-level transient spectroscopy (DLTS). The upper limit of the temperature range (700 K) allows for the study of deeper levels in the bandgap than those previously reported by conventional DLTS. Three trap states were revealed to be responsible for carrier compensation. Besides the residual carbon (C) acceptor, two deep electron traps detected in the DLTS high-temperature range, labeled E2 and E3 with energies EC of 0.98 and 1.38 eV, respectively, were also found to have contributions to the carrier compensation. A comprehensive investigation combining with positron annihilation spectroscopy measurements revealed that E2 and E3 are related to the (–/2–) and (0/–) acceptor levels of the VGa–ON complex, respectively. The relatively high concentrations of E2 and E3 imply that the VGa–ON complex is an essential carrier compensation source in the drift layer and plays a crucial role in developing kV-class vertical GaN power devices.

It has been established that the formation of point defects and their behaviors could be regulated by growth details such as growth techniques and growth conditions. In this work, we prove that C doping approaches have great influence on the charge state of [Formula: see text], thus the interaction between H and C in GaN. For GaN with intrinsic C doping, which is realized by reducing the V/III ratio, [Formula: see text] mainly exists in the form of [Formula: see text] charged from the higher concentration of [Formula: see text] and, thus, may attract [Formula: see text] by coulomb interaction. Whereas for the extrinsically C doped GaN with propane as the doping source, the concentration of [Formula: see text] is reduced, and [Formula: see text] mainly exists in neutral charge state and, thus, nearly does not attract H ions. Therefore, we demonstrate that the interplay between H and C atoms is weaker for the extrinsically C doped GaN compared to the intrinsically doped GaN, thus gives a clear picture about the different charge states of [Formula: see text] and the formation of C–H complexes in GaN with different C doping approaches.