Recently, energy saving glass is commonly applied in the modern engineered building. This is due to its advantages of keeping the heat inside the building in winter while rejecting the heat when in summer. The typical energy saving glass is made by applying a very thin metallic oxide such as silver oxide or tin oxide on one side of the float glass. But at the same time, it has the disadvantages of attenuates useful microwave frequencies that ranging from 0.8 2.2 GHz. The examples of the microwave frequency at this range are GSM mobile signal, GPS and personal communication. Frequency selective surface (FSS) has been introduced to overcome this drawback of energy saving glass. In this study, the transmission of the microwave signal is observed through the simulation using Computer Simulation Technology Microwave Studio. Bandpass frequency selective surface of cross dipole shape is used for the simulation. In the simulation, conductivity and electrical properties of glass and metal oxide thin film are important. The microwave transmission was evaluated at various sheet resistance of metal oxide thin film. The results show that the minimum transmission lost increased with the ohmic resistance increased. On the other hand, the peak frequency at various sheet resistance shows constant value at around 1.25-1.30 GHz. The full width half maximum of the microwave transmission increases with the sheet resistance value. The results suggest that FSS structured metal oxide thin film with lowest sheet resistance transmits more signal in the range for GSM phone signal.

Metal oxide thin films are widely used for energy saving glass coating. This coating has the ability of blocking the infrared signal while being transparent to other visible part of the spectrum. However, there is one critical disadvantage of this metal oxide coating which it attenuates useful radio frequency and microwave signal such as GSM mobile signal, personal communication, GPS signal through them. These important microwave signals are fall within the range of 800 MHz to 2200 MHz. Frequency selective structure has been applied to solve the attenuation of microwave signal. With the adding of frequency selective structure, it can bring huge improvement of the transmission loss through it. Computer simulation using CST software is used to investigate the transmission loss through the metal oxide coated glass. The frequency selective structure will be etched out from the metallic oxide coated on the glass. Results showed that different shape of the structure will have different peak transmission loss through the glass. When cross dipole and circle shape been simulated using CST software, it can clearly see that the transmission lost and peak frequency had changed drastically. Then, triangle and pentagon shape also have different transmission through it. In addition, conductivity and electrical properties of coated metal oxide thin film is also very important. The transmission through the different ohmic sheet resistance of metal oxide thin film was also investigated. The sheet resistance value was obtained from the reported experimental results. Simulated results showed that full width half maximum, maximum transmission loss and peak frequency loss was very much dependent on the metal oxide sheet resistance. Therefore, the control of the thickness and oxygen content in metal oxide thin film are very much important to optimize the transmission loss through it for energy saving glass applications.

Tin oxide (SnO 2 ) films were grown by radio frequency magnetron sputtering at room temperature condition on glass substrates at various deposition times from 10 to 30 minutes with 10 minutes time intervals. A ceramic target of tin oxide was used and sputtering process with the argon and oxygen flow rate of 25 sccm and 8 sccm, respectively. The power given to the system is 225 W and total chamber pressures of 8.25 mTorr were used during the deposition. The deposition rate of SnO 2 thin film at this condition was 15.28 nm/minute. The morphology and roughness of the films were analyzed by FESEM and AFM, respectively. In general, the grain size of SnO 2 increased with the film thickness. Sheet resistances and electrical resistivity of the films were measured by probe station. Sheet resistance decreased with the film thickness increased. While the electrical resistivity directly proportional to the film thickness.