Silicon‐based micro‐ and nano‐structures for light management at near‐infrared and visible frequencies have been widely exploited for guided optics and metasurfaces. However, light emission with this material has been hampered by the indirect character of its bandgap. Here it is shown that, via ion beam implantation, light emitting G‐centers can be directly embedded within Si‐based Mie resonators previously obtained by solid state dewetting. Size‐ and position‐dependent, directional light emission at 120 K is demonstrated experimentally and confirmed by finite difference time domain simulations. It is estimated that, with an optimal coupling of the G‐centers emission with the resonant antennas, a collection efficiency of about 90% can be reached using a conventional objective lens. The integration of these telecom‐frequency emitters in resonant antennas is relevant for their efficient exploitation in quantum optics applications and more generally to Si‐based photonic metasurfaces.