The mass production technique of gravure contact printing is used to fabricate state‐of‐the art polymer field‐effect transistors (FETs). Using plastic substrates with prepatterned indium tin oxide source and drain contacts as required for display applications, four different layers are sequentially gravure‐printed: the semiconductor poly(3‐hexylthiophene‐2,5‐diyl) (P3HT), two insulator layers, and an Ag gate. A crosslinkable insulator and an Ag ink are developed which are both printable and highly robust. Printing in ambient and using this bottom‐contact/top‐gate geometry, an on/off ratio of >104 and a mobility of 0.04 cm2 V−1 s−1 are achieved. This rivals the best top‐gate polymer FETs fabricated with these materials. Printing using low concentration, low viscosity ink formulations, and different P3HT molecular weights is demonstrated. The printing speed of 40 m min−1 on a flexible polymer substrate demonstrates that very high‐volume, reel‐to‐reel production of organic electronic devices is possible.
In the field of polymer solar cells, improving photovoltaic performance has been the main driver over the past decade. To achieve high power conversion efficiencies, a plethora of new photoactive donor polymers and fullerene derivatives have been developed and blended together in bulk heterojunction active layers. Simultaneously, further optimization of the device architecture is also of major importance. In this respect, we report on the use of specific types of electron transport layers to boost the inherent I–V properties of polymer solar cell devices, resulting in a considerable gain in overall photovoltaic output. Imidazolium‐substituted polythiophenes are introduced as appealing electron transport materials, outperforming the currently available analogous conjugated polyelectrolytes, mainly by an increase in short‐circuit current. The molecular weight of the ionic polythiophenes has been identified as a crucial parameter influencing performance.
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