Flexible energy storage electronics have gained increasing attention in recent years, but the simultaneous acquiring of high volumetric and high areal capacities as well as excellent flexibility in order to truly implement wearable and portable electronics in practice remains challenging. Here, a conductive and highly deformable freestanding all‐pseudocapacitive paper electrode (Ti3C2Tx/MnO2 NWs) is fabricated by solution processing of hybrid inks based on Ti3C2Tx MXene and ultralong MnO2 nanowires. The resulting Ti3C2Tx/MnO2 NWs hybrid paper manifests a remarkable areal capacitance of up to 205 mF cm−2 and outstanding volumetric capacitance of 1025 F cm−3. Both the values are highly comparable with, or in most cases much higher than those of previously reported MXene‐based flexible electrodes. The excellent energy storage performance is well maintained with a capacitance retention of 98.38% during 10 000 charge–discharge cycles. In addition, the flexible supercapacitor demonstrates excellent flexibility and electrochemical stability during repeated mechanical bendings of up to 120°, suggesting great potentials for the applications in future flexible and portable electronics.

The as-prepared Fe7S8@C exhibits outstanding electrochemical performance as anode materials for LIBs and SIBs owing to the biscuit-like nanostructure and conformal surface coating with carbon.

1.439 V of open-circuit voltage and 1413.3 Wh•kg −1 of energy density.

2D Janus transition metal dichalcogenide (TMD) semiconductor materials have attracted great interest for their potential applications. Because of the increased requirement for thermal management in 2D devices with single‐atom thickness, a fundamental understanding of interfacial thermal conduction (ITC) has emerging significance. In this work, the ITC of in‐plane heterostructures constructed using MoSSe and WSSe is reported. In addition to the interface connected normally by MoSSe and WSSe with the same type of chalcogen atoms are on the same side of left and right sections, inversional interface by rotation of 180° of WSSe is also considered, in which S atoms are on the opposite side of the left and right sections. Interestingly, the ITC in the normally connected heterostructure is found to be almost twice as much as that in the inversely connected heterostructure. The unusually large change in ITC is attributed to the bending curvature and additional discontinuity in the inversely connected heterostructure. Euler–Bernoulli beam model gives further insight into the origin of such interface bending. The findings offer the very first insight into the phonon transport in Janus heterostructures, and benefit thermal management of 2D devices based on Janus monolayers.