A zero-refractive-index metamaterial is one in which waves do not experience any spatial phase change, and such a peculiar material has many interesting wave-manipulating properties. These materials can in principle be realized using man-made composites comprising metallic resonators or chiral inclusions, but metallic components have losses that compromise functionality at high frequencies. It would be highly desirable if we could achieve a zero refractive index using dielectrics alone. Here, we show that by employing accidental degeneracy, dielectric photonic crystals can be designed and fabricated that exhibit Dirac cone dispersion at the centre of the Brillouin zone at a finite frequency. In addition to many interesting properties intrinsic to a Dirac cone dispersion, we can use effective medium theory to relate the photonic crystal to a material with effectively zero permittivity and permeability. We then numerically and experimentally demonstrate in the microwave regime that such dielectric photonic crystals with reasonable dielectric constants manipulate waves as if they had near-zero refractive indices at and near the Dirac point frequency.

Vanadium dioxide(VO2) is a paradigmatic example of a strongly correlated system that undergoes a metal-insulator transition at a structural phase transition. To date, this transition has necessitated significant post-hoc adjustments to theory in order to be described properly. Here we report standard state-of-the-art first principles quantum Monte Carlo (QMC) calculations of the structural dependence of the properties of VO2. Using this technique, we simulate the interactions between electrons explicitly, which allows for the metal-insulator transition to naturally emerge, importantly without ad-hoc adjustments. The QMC calculations show that the structural transition directly causes the metal-insulator transition and a change in the coupling of vanadium spins. This change in the spin coupling results in a prediction of a momentum-independent magnetic excitation in the insulating state. While two-body correlations are important to set the stage for this transition, they do not change significantly when VO2 becomes an insulator. These results show that it is now possible to account for electron correlations in a quantitatively accurate way that is also specific to materials.

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We report magnetic field dependent transport measurements on a single crystal of cubic YSb together with first principles calculations of its electronic structure. The transverse magnetoresistance does not saturate up to 9 T and attains a value of 75 000% at 1.8 K. The Hall coefficient is electron-like at high temperature, changes sign to hole-like between 110 and 50 K, and again becomes electron-like below 50 K. First principles calculations show that YSb is a compensated semimetal with a qualitatively similar electronic structure to that of isostructural LaSb and LaBi, but with larger Fermi surface volume. The measured electron carrier density and Hall mobility calculated at 1.8 K, based on a single band approximation, are [Formula: see text] cm(-3) and [Formula: see text] cm(2) Vs(-1), respectively. These values are comparable with those reported for LaBi and LaSb. Like LaBi and LaSb, YSb undergoes a magnetic field-induced metal-insulator-like transition below a characteristic temperature T m, with resistivity saturation below 13 K. Thickness dependent electrical resistance measurements show a deviation of the resistance behavior from that expected for a normal metal; however, they do not unambiguously establish surface conduction as the mechanism for the resistivity plateau.