A solution to the fabrication of amorphous Ga2O3 solar‐blind photodetectors on rigid and flexible substrates at room temperature is reported. A robust improvement in the response speed is achieved by delicately controlling the oxygen flux in the reactive radio frequency magnetron sputtering process. Temporal response measurements show that the detector on quartz has a fast decay time of 19.1 µs and a responsivity of 0.19 A W−1 as well, which are even better than those single crystal Ga2O3 counterparts prepared at high temperatures. X‐ray photoelectron spectroscopy and current–voltage tests suggest that the reduced oxygen vacancy concentration and the increased Schottky barrier height jointly contribute to the faster response speed. Amorphous Ga2O3 solar‐blind photodetector is further constructed on polyethylene naphthalate substrate. The flexible devices demonstrate similar photoresponse behavior as the rigid ones, and no significant degradation of the device performance is observed in bending states and fatigue tests. The results reveal the importance of finely tuned oxygen processing gas in promoting the device performance and the applicability of room‐temperature synthesized amorphous Ga2O3 in fabrication of flexible solar‐blind photodetectors.

Ga2O3, as an emerging optoelectronic material, is very appealing for the detection of ionizing radiation because of its low cost, wide band gap (4.5–5.0 eV) and radiation hardness. In this work, a flexible X-ray detector using amorphous Ga2O3 (a-Ga2O3) thin film is demonstrated. The a-Ga2O3 thin film was deposited on polyethylene naphthalate (PEN) substrate with delicately control of the oxygen flux during the radio frequency (RF) magnetron sputtering process. Metal/semiconductor/metal-structured photodetectors with coplanar interdigital electrodes were fabricated on this a-Ga2O3 film. Temporal response measurements under X-ray illumination indicate that a larger photocurrent occurs on the film deposited with smaller oxygen flux. A model combined with theoretical calculation is proposed to explain the enhancement of the X-ray photoresponsivity, which involves the slowing down of the annihilation rate caused by the neutralization of more ionized oxygen vacancy (Vo) states. No significant degradation of the device performance under UV and X-ray radiation is observed after the flexibility test. This finding informs a novel way to design the flexible X-ray and other ionizing radiation detectors based on amorphous oxide materials.