We observed an unusual double-shifted hysteresis loop in a perpendicular exchange-coupled Co/IrMn system at room temperature, which leads to an uneven exchange bias field in the positive and the negative field. With the thickness of the antiferromagnetic layer ranging from 4.8 to 10.4 nm, the negative exchange bias field is approximately 100 Oe larger than the positive exchange bias field. This result is related to the density of net spins in the antiferromagnetic layer that have pinned on the ferromagnetic layer. In addition, the exchange bias field of this unusual double-shifted hysteresis loop can be adjusted by the magnetic field annealing temperature.
It is well known that CsCl‐type FeRh undergoes from antiferromagnetic (AFM) to ferromagnetic (FM) phase transition near room temperature with large thermal hysteresis. Therefore, it is particularly essential to find new methods to manipulate the magnetic order of FeRh and reduce thermal hysteresis. Herein, the magnetic phase transition of FeRh film by applying a low‐frequency in‐plane alternating current (AC) magnetic field is successfully manipulated. It is found that under the AC magnetic field, the phase transition of the FM–AFM is promoted, and the heating branch shifts at a rate of −8 K T−1, which causes the thermal hysteresis of FeRh reduction of about 2 K. These phenomena may be attributed to the Zeeman energy and the periodic vibration of domain walls. This work provides the possibility for the realization of low‐power spintronic devices.
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