An adjusted color of amorphous silicon thin film solar cells is illustrated by using a multilayer film design. The multilayer film consists of silver (Ag) and gallium doped Zinc oxide (GZO), which serves as an adjusted color reflection (ACR) multilayer film. The color can be adjusted with wide range from dark blue to blue red colors when the GZO thickness increases from 50 to 150 nm. The color adjusted by the ACR multilayer film is in good agreement with the reflectance response of the multilayer. The influence of the ACR multilayer film on the solar cell performance is discussed.

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This paper presents two purposes: 1) the effect of the sputtering power density on AZO and AZOY films by using pulse DC magnetron sputtering technology; 2) the comparison of the differences between AZO and AZOY films optical and electrical properties under different power density. The AZO and AZOY films' resistivity decrease with the increasing of power density; both of them reach 560 J.l 0 cm while the power density is 2.26 W/cm 2 • The transmission of AZO and AZOY films reduces as the extending of power density. Yet, AZO films become more sensitive. When power density increases from 0.42 to 2.26 W/cm 2 , transmission is significantly reduced from 88% to 74%. However, AZOY films show opposite reaction toward power density. While power density increases from 0.42 to 2.26 W/cm 2 , the transmission still keeps at 90%. Therefore, we can expect that AZOY films in this study are suitable for the application of transparent and conductive abilities.

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GZO transparent conductive thin films were deposited by the direct current magnetron sputtering method from a ZnO target doped with Ga2O3 of 3wt% on glass slide substrates under high pressure of argon. The effect of substrate temperature on the GZO film’s morphology, optical and electrical properties is investigated by using scanning electron microscopy (SEM), UV spectrophotometer, four point probe and Spectroscopic Ellipsometer. The results showed that GZO thin films with high quality could be fabricated under the high pressure of argon.When substrate temperature is 250°C or below, surface morphology of thin films can be significantly improved.With the increase of substrate temperature, the crystal grain become larger, the crystal boundaries narrow and become clear, and reach a best case at 250°C. At the same time, the resistivity of GZO thin films decrease and reach the minimum which is 1.099×10-3 Ω•cm at 300°C while the average transmittance increase to 90%. Consequently, the properties of morphology began to get worse with the increase of temperature above 300°C.