P-type low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) integrated driver circuits are proposed for low-cost chip-on-glass (COG) panel. In order to reduce the process cost of panel, gate driver employing level-shifter, shift register and DC-DC converter is integrated by p-type polycrystalline silicon (poly-Si) TFTs. The gate drivers are composed of the level-up and level-down voltage shifters and the robust two-clock shift registers. The DC-DC converters are designed using diode-connected type charge pumps and regulators. The proposed p-type circuits were verified successfully by the simulations and the measurements.

High-aperture ratio pixel design employing polycrystalline silicon thin-film transistors (poly-Si TFTs) for active matrix organic light emitting diode (AMOLED) displays is proposed. The VDD supply line in each pixel is eliminated and the gate scan line is utilized as a VDD supply so that the pixel aperture ratio is increased considerably. The increased emission area achieves low current density through OLED, thus the troublesome OLED luminance degradation would be suppressed and the life-time of OLED materials may be increased. In order to implement the proposed pixel driving, a new fabrication process for the storage capacitor (CST) which uses indium–tin oxide (ITO) and the cathode layers is presented.

An L-shaped dual-gate device structure, which reduces kink current in polycrystalline silicon thin-film transistors (poly-Si TFTs), has been proposed and fabricated. In the proposed device, the poly-Si TFTs have a lateral grain growth in channels such as TFTs fabricated by sequential lateral solidification (SLS) or CW laser crystallization. The current flow of dual TFTs is strongly affected by grain boundaries showing lateral grain growth. The L-shaped dual gate structure is employed for asymmetry between dual channels. One of the channels is located in a parallel direction of grain growth and the other is located vertically. It is verified by experiment that the proposed L-shaped dual-gate TFT reduced the kink current of poly-Si TFT and showed improved reliability by fixed current flow in the saturation mode.