Layered transition metal dichalcogenides (TMDs) are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets in at TCDW = 33 K and superconductivity sets in at Tc = 7.2 K. Below Tc these electronic states coexist but their microscopic formation mechanisms remain controversial. Here we present an electronic characterization study of a single 2D layer of NbSe2 by means of low temperature scanning tunneling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and electrical transport measurements. We demonstrate that 3x3 CDW order in NbSe2 remains intact in 2D. Superconductivity also still remains in the 2D limit, but its onset temperature is depressed to 1.9 K. Our STS measurements at 5 K reveal a CDW gap of  = 4 meV at the Fermi energy, which is accessible via STS due to the removal of bands crossing the Fermi level for a single layer. Our observations are consistent with the simplified (compared to bulk) electronic structure of single-layer NbSe2, thus providing new insight into CDW formation and superconductivity in this model strongly-correlated system.

A quantum spin Hall (QSH) insulator is a novel twodimensional quantum state of matter that features quantized Hall conductance in the absence of a magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin-orbit coupling 1,2 . By investigating the electronic structure of epitaxially grown monolayer 1T'-WTe 2 using angle-resolved photoemission (ARPES) and first-principles calculations, we observe clear signatures of topological band inversion and bandgap opening, which are the hallmarks of a QSH state. Scanning tunnelling microscopy measurements further confirm the correct crystal structure and the existence of a bulk bandgap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Our results establish monolayer 1T'-WTe 2 as a new class of QSH insulator with large bandgap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).A two-dimensional (2D) topological insulator (TI), or a quantum spin Hall insulator, is characterized by an insulating bulk and a conductive helical edge state, in which carriers with different spins counter-propagate to realize a geometry-independent edge conductance 2e 2 /h (refs 1,2). The only scattering channel for such helical edge current is back scattering, which is prohibited by time reversal symmetry, making QSH insulators a promising material candidate for spintronic and other applications.The prediction of the QSH effect in HgTe quantum wells sparked intense research efforts to realize the QSH state [3][4][5][6][7][8][9][10][11] . So far only a handful of QSH systems have been fabricated, mostly limited to quantum well structures of three-dimensional (3D) semiconductors such as HgTe/CdTe (ref.3) and InAs/GaSb (ref. 6). Edge conduction consistent with a QSH state has been observed 3,6,12 . However, the behaviour under a magnetic field, where time reversal symmetry is broken, cannot be explained within our current understanding of the QSH effect 13,14 . There have been continued efforts to predict and investigate other material systems to further advance the understanding of this novel quantum phenomenon 5,[7][8][9]15 . So far, it has been difficult to make a robust 2D material with a QSH state, a platform needed for widespread study and application. The small bandgaps exhibited by many candidate systems, as well as their vulnerability to strain, chemical adsorption, and element substitution, make them impractical for advanced spectroscopic studies or applications. For example, a QSH insulator candidate stanene, a monolayer analogue of graphene for tin, grown on Bi 2 Se 3 becomes topologically trivial due to the modification of its band structure by the underlying substrate 11,16 . Free-standing Bi film with 2D bonding on a cleaved surface has shown edge conduction 9 , but its topological nature is still debated 17 . It takes 3D out-of-plane bonding with the substrate and large stra...

We provide direct evidence for the existence of isolated, one-dimensional charge density waves at mirror twin boundaries (MTBs) of single-layer semiconducting MoSe 2 . Such MTBs have been previously observed by transmission electron microscopy and have been predicted to be metallic in MoSe 2 and MoS 2 1-7. Our low-temperature scanning tunnelling microscopy/spectroscopy measurements revealed a substantial bandgap of 100 meV opening at the Fermi energy in the otherwise metallic one-dimensional structures. We found a periodic modulation in the density of states along the MTB, with a wavelength of approximately three lattice constants. In addition to mapping the energy-dependent density of states, we determined the atomic structure and bonding of the MTB through simultaneous high-resolution non-contact atomic force microscopy. Density functional theory calculations based on the observed structure reproduced both the gap opening and the spatially resolved density of states.Properties of two-dimensional (2D) transition metal dichalcogenides (TMDs) are highly sensitive to the presence of defects, and a detailed understanding of their structure may lead to tailoring of material properties through 'defect engineering' . Intrinsic defects have been studied extensively in graphene [8][9][10][11][12] . Defects in 2D semiconductors have been explored to a lesser extent, but are expected to substantially modify material properties. 2D TMD semiconductors are particularly interesting because they exhibit direct bandgaps in the visible range [13][14][15] , high charge-carrier mobility 16,17 , extraordinarily enhanced light-matter interactions [18][19][20][21] and potential applications in novel optoelectronic devices 22,23 . Individual atomic-scale defects in 2D TMDs are expected to modify charge transport 24 or introduce ferromagnetism 25 , whereas one-dimensional defects such as grain boundaries and edges may alter electronic 1 and optical properties 1,26 , and introduce magnetic 27 or catalytic 28,29 functionality. Here we report the direct observation of one-dimensional (1D) charge density waves (CDWs) intrinsic to the conducting MTBs of monolayer MoSe 2 . A 1D CDW is a macroscopic quantum state, where atoms in a 1D metallic system relax and break translational symmetry to reduce total energy by opening a small bandgap at the Fermi energy (E F ) and modulating the charge density at the periodicity of the lattice distortion 30,31 . Although CDW order has been observed in 2D TMD metals such as NbSe 2 and TiSe 2 at low temperature 32,33 , CDWs have not previously been associated with 2D TMD semiconductors.Most studies of 1D CDWs have been performed on ensembles of CDWs in conducting polymers, quasi-one-dimensional metals or self-assembled atomic chains adsorbed on semiconducting surfaces, where inter-CDW coupling can significantly impact CDW properties [34][35][36][37][38] . The CDWs observed here are electronically isolated from one another, and have truly one-dimensional character, forming an atomically precise model system t...