Several techniques have been proposed for kerfless wafering of thin Si wafers, which is one of the most essential techniques for reducing Si material loss in conventional wafering methods to lower cell cost. Proton induced exfoliation is one of promising kerfless techniques due to the simplicity of the process of implantation and cleaving. However, for application to high efficiency solar cells, it is necessary to cope with some problems such as implantation damage removal and texturing of (111) oriented wafers. This study analyzes the end-of-range defects at both kerfless and donor wafers and ion cutting sites. Thermal treatment and isotropic etching processes allow nearly complete removal of implantation damages in the cleaved-thin wafers. Combining laser interference lithography and a reactive ion etch process, a facile nanoscale texturing process for the kerfless thin wafers of a (111) crystal orientation has been developed. We demonstrate that the introduction of nanohole array textures with an optimal design and complete damage removal lead to an improved efficiency of 15.2% based on the kerfless wafer of a 48 μm thickness using the standard architecture of the Al back surface field.

We demonstrated fabrication of a parabola shaped Si nanostructures of various periods by combined approach of nanosphere lithography and a single step CF4/O2 reactive ion etch (RIE) process. Silica nanosphere monolayers in a hexagonal array were well deposited by a solvent controlled spin coating technique based on binary organic solvents. We showed numerically that a parabolic Si nanostructure of an optimal period among various-shaped nanostructures overcoated with a dielectric layer of a 70 nm thickness provide the most effective antireflection. As the simulation results as a design guide, we fabricated the parabolic Si nanostructures of a 520 nm period and a 300 nm height exhibiting the lowest weighted reflectance of 2.75%. With incorporation of such parabolic Si nanostructures, a damage removal process for 20 sec and SiNx antireflection coating of a 70 nm thickness, the efficiency of solar cells increased to 17.2% while that of the planar cells without the nanostructures exhibited 16.2%. The efficiency enhancement of the cell with the Si nanostructures was attributed to the improved photocurrents arising from the broad spectral antireflection which was confirmed by the external quantum efficiency (EQE) measurements.

We report high efficiency cell processing technologies for the ultra-thin Si solar cells based on crystalline Si thin foils (below a 50 µm thickness) produced by the proton implant exfoliation (PIE) technique. Shallow textures of submicrometer scale is essential for effective light trapping in crystalline Si thin foil based solar cells. In this study, we report the fabrication process of random Si nanohole arrays of ellipsoids by a facile way using low melting point metal nanoparticles of indium which were vacuum-deposited and dewetted spontaneously at room temperature. Combination of dry and wet etch processes with indium nanoparticles as etch masks enables the fabrication of random Si nanohole arrays of an ellipsoidal shape. The optimized etching processes led to effective light trapping nanostructures comparable to conventional micro-pyramids. We also developed the laser fired contact (LFC) process especially suitable for crystalline Si thin foil based PERC solar cells. The laser processing parameters were optimized to obtain a shallow LFC contact in conjunction with a low contact resistance. Lastly, we applied the random Si nanohole arrays and the LFC process to the crystalline Si thin foils (a 48 µm thickness) produced by the PIE technique and achieved the best efficiency of 17.1% while the planar PERC solar cell without the Si nanohole arrays exhibit 15.6%. Also, we demonstrate the ultra-thin wafer is bendable to have a 16 mm critical bending radius.

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