Flexible perovskite solar cells with an ion plated ITO electrode showed a higher power conversion efficiency and better flexibility than sputtered ITO-based perovskite solar cells.

No abstract

It is developed that transparent p-type Sb-doped cuprous oxide (ACO) integrated Sn-doped In 2 O 3 (ITO) film as hole injection layer (HIL) and anode combined electrodes for quantum dot light emitting diodes (QD-LEDs) to substitute acidic PEDOT:PSS HIL based electrode. By graded co-sputtering of ACO and ITO targets, the graded p-type ACO buffer layer can be integrated on the surface region of the ITO electrodes. P-type conductivity of the ACO film for acting as effective HIL in QD-LEDs is confirmed by a positive Hall coefficient (1.74 Â 10 À3 ohm cm 3 /C) and a positive Seebeck constant (115 mV K À1 ). Due to the well-matched work function of p-type ACO on the ITO electrodes, the acidic PEDOT:PSS-free QD-LEDs exhibited typical currentvoltage-luminescence of QD-LEDs. The successful operation of PEDOT:PSSfree QD-LED with p-type ACO integrated ITO electrode indicates that ACO and ITO anode graded sputtering is simpler fabrication steps for costeffective QD-LEDs and elimination of interfacial reactions caused by the acidic PEDOT:PSS layer for reliable QD-LEDs.