We demonstrate a new solution-processed electron transport layer (ETL), zinc oxide doped with cesium carbonate (ZnO:Cs2CO3), for achieving organic photovoltaics (OPVs) with good operational stability at ambient air. An OPV employing the ZnO:Cs2CO3 ETL exhibits a fill factor of 62%, an open circuit voltage of 0.90 V, and a short circuit current density of −6.14 mA/cm2 along with 3.43% power conversion efficiency. The device demonstrated air stability for a period over 4 weeks. In addition, we also studied the device structure dependence on the performance of organic photovoltaics. Thus, we conclude that ZnO:Cs2CO3 ETL could be employed in a suitable architecture to achieve high-performance OPV.

A semi-transparent inverted quantum dot light emitting diode (QLED) is demonstrated using tri-layer QDs, exhibiting bottom emission of 6,485 cd/m 2 and top emission of 1,911 cd/m 2 . And its transmittance in the visible region is ~30 % with 18 nm Ag top semi-transparent electrode.

We present the first display panels exploiting the nVerPix CN-VOLET technology that reduces the pixel circuit of the conventional AMOLED display to two discrete components: the switching transistor and the CN-VOLET. This permits high aperture ratio bottom emission displays-as high as 70% hereand greatly simplifies the manufacturing. Mono-color QVGA AMOLED displays (6.4 cm diagonal) playing video will be shown. Author KeywordsOLED; organic light emitting transistor; carbon nanotube; active matrix P-206L / M. A. McCarthyLate-News Poster • SID 2016 DIGEST

The photodiode is a promising architecture for photodetection because of its fast response and high external quantum efficiency (EQE). The photodiode requires high detectivity, responsivity, and low dark current for various applications. Here, a new structure of quantum‐dots (QD) photodiode is reported for ultraviolet (UV), blue, green, and red light sensing using a red QD layer between p‐type and n‐type metal‐oxide semiconductors. CdZnSeS/ZnS QD is used for photoabsorption with p‐type Cu2SnS3–Ga2O3 and n‐type Li doped ZnO (LZO) for carrier collection. The QD photodiode has a low dark current density of 2.08 nA cm−2 at −1 V leading to high rectification ratio of ≈105. The QD photodiode shows superior properties with responsivity of 0.258 A W−1 and detectivity of 1.00 × 1013 Jones at −1 V under green illumination. The rise and fall times of QD photodiode are 2.1 and 2.6 ms, respectively. The QD photodiode on a flexible polyimide (PI) substrate is also demonstrated, exhibiting stable characteristics under bending test of 20 000 cycles at a bending radius of 0.32 mm.

We demonstrate that there is a new solution-processed electron transport layer, lithium-doped zinc oxide (LZO), with high-performance inverted organic photovoltaic device. The device exhibits a fill factor of 68.58%, an open circuit voltage of 0.86 V, a short-circuit current density of −9.35 cm/mA2 along with 5.49% power conversion efficiency. In addition, we studied the performance of blend ratio dependence on inverted organic photovoltaics. Our device also demonstrates a long stability shelf life over 4 weeks in air.