No abstract

The experimental results causing the trench of subwavelength nanostructures formation in semiconductor's 4H-SiC surface and inside volume along the femtosecond beam path are considered. The given qualitative explanation of the observed phenomenon is based on universal polariton model of laser-induced material damage with extension of excitation the cylindrical surface plasmon polaritons and their interference with opposite wave vectors directions following the semiconductor's cylindrical rode metallization.The investigations of character and causes of the damage of surfaces and volume of condensed matter under the irradiation of ultrashort polarized laser pulses are continued by wide front and excite the increased interest. The mechanism and causes of regular nano-and microstructures formation under the interaction of ultra short pulses of laser radiation with metal surfaces are connected with surface plasmon polariton participation in the material damage process (universal polariton model of laser-induced condensed matter damage). But interpretation of causes of semiconductors and dielectrics damage in published literature is not unambiguous. Below the experimental results of the effect of femtosecond laser radiation pulses on semiconductors damage are analyzed and the 4H-SiC is selected for example.As shown in recent papers [1 -4], at the femtosecond pulses action on the crystalline semiconductor's 4H-SiC surface in the transparency region results in the three types of periodic structures formation: Microstructures with , d and orientation E g || ; Nanostructures with , 2n d and orientation E g || [5]; Nanostructures with , 2n dand orientation E g , spatially situated along the beam propagation direction k g || , where k is wave vector of light As was shown in papers [6,7], the formation of structures with , d and E g || (first type of structures) is connected with nonequilibrium phase change and semiconductor metallization, exciting of surfaces plasmon polaritons on interface with air (vacuum) and their interference with incident radiation. At the same time the period of formed structures d is determined by relation Re d . Here is the normalized complex refractive index of air-plasma interface,