Esta es la versión de autor del artículo publicado en: This is an author produced version of a paper published in: change from 1.59 to 1.94 eV when the Ge content is increased from x = 0.1 to 0.5 as determined from spectroscopic ellipsometry measurements. This knowledge opens a route to enhance the performance of kesterite-based photovoltaic devices by a Ge-graded absorber layer. Furthermore, the formation of GeO 2 on the surface of the as-grown samples was detected by X-ray photoelectron spectroscopy, having an important impact on the effective optical response of the material. This should be also taken into account when designing photovoltaic solar cells.

The linear optical properties of Cu 2 ZnSn 1-x Ge x S 4 high quality single crystals with a wide range of Ge contents (x = 0.1, 0.3, 0.5, 0.7, 0.9 and 1) have been investigated in the ultraviolet and near infrared range using spectroscopic ellipsometry measurements. From the analysis of the complex dielectric function spectra it has been found that the bandgap E 0 increases continuously from 1.49 eV to 2.25 eV with the Ge *Manuscript revised Click here to view linked References

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El acceso a la versión del editor puede requerir la suscripción del recurso Access to the published version may require subscription On the other hand, it is still necessary to understand the role of the growth parameters to produce kesterite material with the optimum properties for maximum device efficiency. fabricated by a sequential, or two-stage, process: deposition of precursor followed by post-sulfurization/selenization. This is advantageous due to its capability and high throughput. However, it is also desirable to reduce the number of stages during the growth process.