We report a successful fabrication of silicon-based single-electron transistors (SETs), which display nearly THz-level ultra-fast intrinsic RC speed. The SETs were fabricated on silicon-oxide-insulator structures by a pattern-dependent oxidation (PADOX) technique, combined with e-beam lithography. Drain conductances measured at 4.2 K approach large values of µS order, exhibiting Coulomb oscillations with peak-to-valley current ratios 1000. Data analysis, with the probable mechanism of PADOX, yields their intrinsic RC speeds of ∼1.3 THz, which is within an order of magnitude of the theoretical quantum limit. Even though a direct dynamical quantity related to the extracted RC time constant is not directly measured, this result will be of importance to the mesoscopic transport and high-frequency communities.