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Poly(azomethine sulfone)s were synthesized by reacting 4,4 -sulfonyl bis(4-chlorophenyl) with 2, 2-bis(4-hydroxyphenyl)propane and azomethine bisphenol in different molar ratios. Thin films were deposited from solution onto glass substrates. Study of the temperature dependences of the electrical conductivity, σ , and Seebeck coefficient, S, were performed in the temperature range 300 K-500 K. Thermal activation energies of electrical conduction, E a , calculated from these dependences, ranged between 1.50 eV and 1.85 eV. The values of E a were smaller for polymers with extended conjugation systems. The possibility to use the polymers in thermistor technology is discussed. The aspect of the temperature dependences of σ and S shows that a model based on the energy band-gap representation can be successfully used for explaining the electronic transport mechanism in the higher temperature range. In the lower temperature range, the mechanism of the electrical conduction is discussed in terms of the Mott variable range hopping conduction. The values of some optical parameters (absorption coefficient, optical band gap, etc.) were determined from transmission spectra.

The p–n heterojunction ITO/Chl a/TPyP/Al [Chl a – chlorophyll a and TPyP – 5, 10, 15, 20‐tetra(4‐pyrydil)21H, 23H‐porphine] photovoltaic cells are prepared by electrodeposition of Chl a onto a conductive indium–tin oxide electrode (ITO), followed by successive vacuum deposition of TPyP layer and Al top electrode. The studied dark (J–U) and photovoltaic characteristics, especially the action spectra, suggest the presence of a barrier at the Chl a/TPyP interface. The typical parameters of a photovoltaic cell, under an incident light power of 20 μW/cm2 at 470 nm, are reported. As compared with Chl a/Al Schottky cells, the performance of the fabricated two‐layer cells shows an important improvement.

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