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This study presents a 3-10GHz ultra-wideband lownoise amplifier (UWB LNA) with CMOS distributed amplification,(DA) featuring low power consumption, flat response, high gain (S 21 ), and low noise figure (NF). The DA UWB LNA is designed with standard 0.18μm CMOS technology. Low power consumption, flat and high gain (S 21 ) were achieved through the use of a proposed two stage DA, and current-reused technique with a peaking inductor. An RL terminating network for the gate transmission line, and an under-damped Q-factor for second-order NF frequency response achieved a flat response and, low noise figure (NF). The LNA achieved S 21 of 19.8±1.2 dB and an average NF of 3.4±0.36 dB with power dissipation (PD) of only 14.8 mW. Keywords-low noise amplifier (LNA); ultra-wideband (UWB); distributed amplifier (DA)I.