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A new approach to the CVD of oxides with kinetically hindered diffusion, called volatile surfactant-assisted (VSA) metal±or-ganic chemical vapor deposition (MOCVD), consisting of film deposition in the presence of a volatile low melting point oxide (Bi 2 O 3 ) has been developed. The process was applied to the deposition of LaAlO 3 films, and a model of the process was proposed. Epitaxial and textured LaAlO 3 films on various substrates were obtained, both by thermal and VSA MOCVD. A marked improvement in crystalline quality and surface morphology was found for the films deposited by VSA MOCVD. LaAlO 3 films obtained in the presence of Bi 2 O 3 did not contain Bi. A significant increase (up to five times) of the deposition rate was observed for LaAlO 3 films deposited by VSA MOCVD compared with that for the films grown by thermal MOCVD.

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