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The forward and reverse bias current-voltage (I-V) characteristics of Al-TiW-Pd 2 Si/n-Si Schottky barrier diodes (SBDs) were measured in the temperature range of 300-400 K. The estimated zero-bias barrier height B0 and the ideality factor n assuming thermionic emission (TE) theory show a strong temperature dependence. While n decreases, B0 increases with increasing temperature. The Richardson plot is found to be linear in the temperature range measured, but the activation energy value of 0.378 eV and the Richardson constant (A * ) value of 15.51 A cm −2 K −2 obtained in this plot are much lower than the known values. Such behavior is attributed to Schottky barrier inhomogeneities by assuming a Gaussian distribution of barrier heights (BHs) due to BH inhomogeneities that prevail at the interface. Also, the B0 versus q/2kT plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and B0 = 0.535 eV and σ 0 = 0.069 V for the mean BH and zero-bias standard deviation, respectively, have been obtained from this plot. Thus, the modified ln(I 0 /T 2 ) − q 2 σ 2 0 2k 2 T 2 versus q/kT plot gives B0 and A * as 0.510 eV and 121.96 A cm −2 K −2 , respectively. This value of the Richardson constant 121.96 A cm −2 K −2 is very close to the theoretical value of 120 A K −2 cm −2 for n-type Si. Hence, it has been concluded that the temperature dependence of the forward I-V characteristics of the Al-TiW-Pd 2 Si/n-Si Schottky barrier diodes can be successfully explained on the basis of a thermionic emission mechanism with a Gaussian distribution of the BHs.