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Herein, the optoelectrical investigation of cadmium zinc telluride (CZT) and indium (In) doped CZT (InCZT) single crystals-based photodetectors have been demonstrated. The grown crystals were configured into photodetector devices and recorded the current-voltage ( I-V ) and current-time ( I-t ) characteristics under different illumination intensities. It has been observed that the photocurrent generation mechanism in both photodetector devices is dominantly driven by a photogating effect. The CZT photodetector exhibits stable and reversible device performances to 632 nm light, including a promotable responsivity of 0.38 AW −1 , a high photoswitch ratio of 152, specific detectivity of 6.30 × 10 11 Jones, and fast switching time (rise time of 210 ms and decay time of 150 ms). When doped with In, the responsivity of device increases to 0.50 AW −1 , photoswitch ratio decrease to 10, specific detectivity decrease to 1.80 × 10 11 Jones, rise time decrease to 140 ms and decay time increase to 200 ms. Moreover, these devices show a very high external quantum efficiency of 200% for CZT and 250% for InCZT. These results demonstrate that the CZT based crystals have great potential for visible light photodetector applications.

The photoconductivity of TlGaSe 2 layered single crystals are investigated in the temperature range 78-300 K. Both the ac-photoconductivity (ac-PC) and the spectral distribution of the photocurrent were studied at different values of light intensity, applied voltage and temperature. Dependences of carrier lifetime on light intensity, applied voltage and temperature have been investigated as results of the ac-PC and dc-photoconductivty (dc-PC) measurements. The temperature dependence of the energy gap width was described as a result of studying the dc-PC.