Key words zirconium nitride/silicon thin films, dc reactive magnetron sputtering, optical constants, electrical resistivity. PACS 81.15.Cd, 68.55, 78.66 This paper deals with the preparation of Zirconium Nitride films by DC reactive magnetron sputtering. Films were deposited on silicon substrates at room temperature. Nitrogen partial pressure was varied from 4x10 -5 to 10x10-5 m bar and the effect on the structural, electrical, optical properties of the films was systematically studied. The films formed at a nitrogen pressure of 6x10 -5 mbar showed low electrical resistivity of 1.726x10 -3 Ω.cm. The deposited films were found to be crystalline with refractive index and extinction coefficient 1.95 and 0.4352 respectively.