A novel concept of optical signal recording in two-phase avalanche detectors, with Geiger-mode Avalanche Photodiodes (G-APD) is described. Avalanche-scintillation photons were measured in a thick Gas Electron Multiplier (THGEM) in view of potential applications in rare-event experiments. The effective detection of avalanche scintillations in THGEM holes has been demonstrated in two-phase Ar with a bare G-APD without wavelength shifter, i.e. insensitive to VUV emission of Ar. At gas-avalanche gain of 400 and under ±70º viewingangle, the G-APD yielded 640 photoelectrons (pe) per 60 keV X-ray converted in liquid Ar; this corresponds to 0.7 pe per initial (prior to multiplication) electron. The avalanche-scintillation light yield measured by the G-APD was about 0.7 pe per avalanche electron, extrapolated to 4π acceptance. The avalanche scintillations observed occurred presumably in the near infrared (NIR) where G-APDs may have high sensitivity. The measured scintillation yield is similar to that observed by others in the VUV. Other related topics discussed in this work are the G-APD's single-pixel and quenching resistor characteristics at cryogenic temperatures.

The performances of THGEM multipliers in two-phase Xe avalanche mode are presented for the first time. Additional results on THGEM operation in gaseous Xe at cryogenic temperatures are provided. Stable operation of a double-THGEM multiplier was demonstrated in two-phase Xe with gains reaching 600. These are compared to existing data, summarized here for two-phase Ar, Kr and Xe avalanche detectors incorporating GEM and THGEM multipliers. The optical readout of THGEMs with Geiger-mode Avalanche Photodiodes (G-APDs) has been investigated in gaseous Xe at cryogenic temperature; avalanche scintillations were recorded in the Near Infrared (NIR) at wavelengths of up to 950 nm. At avalanche charge gain of 350, the double-THGEM/G-APD multiplier yielded 0.07 photoelectrons per initial ionization electron, corresponding to an avalanche scintillation yield of 0.7 NIR photons per avalanche electron over 4π. The results are compared with those of two-phase Ar avalanche detectors. The advantages, limitations and possible applications are discussed.

Characteristic properties of a Geiger Mode APD (G-APD) in a THGEM-based cryogenic two-phase Ar avalanche detector were studied in view of potential applications in rare-event experiments. G-APD signal amplitude and noise characteristics at cryogenic temperatures turned out to be superior to those at room temperature. The effective detection of avalanche scintillations from THGEM-multiplier holes in two-phase Ar has been demonstrated using a G-APD without wavelength shifter. At an avalanche gain of 60, the avalanche scintillation yield measured by the G-APD was as high as 0.9 photoelectrons per avalanche electron, extrapolated to 4π acceptance.

Organic luminophores are widely used in various optoelectronic devices, which serve for photonics, nuclear and particle physics, quantum electronics, medical diagnostics and many other fields of science and technology. Improving their spectral-luminescent characteristics for particular technical requirements of the devices is a challenging task. Here we show a new concept to universal solution of this problem by creation of nanostructured organosilicon luminophores (NOLs), which are a particular type of dendritic molecular antennas. They combine the best properties of organic luminophores and inorganic quantum dots: high absorption cross-section, excellent photoluminescence quantum yield, fast luminescence decay time and good processability. A NOL consists of two types of covalently bonded via silicon atoms organic luminophores with efficient Förster energy transfer between them. Using NOLs in plastic scintillators, widely utilized for radiation detection and in elementary particles discoveries, led to a breakthrough in their efficiency, which combines both high light output and fast decay time. Moreover, for the first time plastic scintillators, which emit light in the desired wavelength region ranging from 370 to 700 nm, have been created. We anticipate further applications of NOLs as working elements of pulsed dye lasers in photonics, optoelectronics and as fluorescent labels in biology and medical diagnostics.