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This paper presents the results of preliminary device and technological simulation and optimization of the operational characteristics of semiconductor microstrip detectors. We investigated the influence of heavy charged particles with linear energy transfers of 1.81 MeV cm 2 mg −1 , 18.8 MeV cm 2 mg −1 and 55.0 MeV cm 2 mg −1 , corresponding to nitrogen 15 N +4 ions with an energy E = 1.87 MeV, iron 56 Fe +15 ions with an energy E = 523 MeV and xenon 131 Xe +35 ions with an energy E = 1217 MeV, as well as the angle of incidence of the particles and the temperature and voltage on the substrate, on the characteristics of the detector. To improve the characteristics of the detector, a screening experiment was carried out and a series of optimization calculations were performed. The results will be used for the manufacture and testing of design parameters for an experimental batch of the investigated devices.

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The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.

The results of applying the compact model of junction field effect transistors developed and integrated into the Cadence software product for control to evaluate the hardness of a two-stage differential amplifier circuit under the combined or separate exposure to fluences of electrons, protons and neutrons are presented.