Under certain assumptions, FBBGs offer a break-even proposition. Results are limited by lack of data regarding several assumptions, and future research should evaluate changes in cost savings following changes in child and adult weight.

This paper reports on polysilicon piezo-resistors that are fabricated at a low thermal budget using aluminium-induced-crystallization (AIC) of ultra-high-vacuum e-beam evaporated silicon films. By in-situ phosphorus doping of precursor amorphous silicon films e-beam evaporated at room temperature on aluminium layer, we are able to increase and control the gauge factor of the polysilicon films formed by AIC at 450 °C. Piezo-resistors made from the polysilicon films are integrated on microcantilever beams to measure their gauge factors. Gauge factors as high as 62 is obtained for 2 × 10 18 /cm 3 phosphorus doping level in the precursor amorphous silicon film. The measured gauge factors are significantly higher than previously reported values for polysilicon films.

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