Nano-lamellar (L12 + B2) AlCoCrFeNi2.1 eutectic high entropy alloy (EHEA) was processed by cryo-rolling and annealing. The EHEA developed a novel hierarchical microstructure featured by fine lamellar regions consisting of FCC lamellae filled with ultrafine FCC grains (average size ~200–250 nm) and B2 lamellae, and coarse non-lamellar regions consisting of ultrafine FCC (average size ~200–250 nm), few coarse recrystallized FCC grains and rather coarse unrecrystallized B2 phase (~2.5 µm). This complex and hierarchical microstructure originated from differences in strain-partitioning amongst the constituent phases, affecting the driving force for recrystallization. The hierarchical microstructure of the cryo-rolled and annealed material resulted in simultaneous enhancement in strength (Yield Strength/YS: 1437 ± 26 MPa, Ultimate Tensile Strength/UTS: 1562 ± 33 MPa) and ductility (elongation to failure/ef ~ 14 ± 1%) as compared to the as-cast as well as cold-rolled and annealed materials. The present study for the first time demonstrated that cryo-deformation and annealing could be a novel microstructural design strategy for overcoming strength-ductility trade off in multiphase high entropy alloys.

The etching of Si(100) surfaces in ultrapure water was studied with a combination of infrared spectroscopy (FTIR) and scanning tunneling microscopy (STM). While the FTIR results show that the initially rough H/Si(100) surface becomes highly homogeneous during etching, a phenomenon generally associated with surface smoothing, STM images reveal that the homogeneity is associated with the formation of well-defined etch hillocks. After many hours of etching, the resulting H-terminated surface is composed of stripes of atomically flat Si(100) terminated by etch hillocks bounded by {111}- and {110}-oriented microfacets. Polarization analysis of the Si-H stretching modes provides strong evidence for uniform dihydride-termination of the flat regions, with the narrow (approximately 25 A) width of these stripes allowing for relaxation of steric strain between neighboring dihydrides. The unusual hill-and-valley etch morphology is attributed to the effects of steric strain on the reactivity of sites on the etched surface.

A simple, room temperature processetching of Si(100) surfaces in 40% NH4F(aq) solutionsproduces H-terminated surfaces of near-atomic smoothness over large areas (>1000 × 1000 Å2). The etched surface is primarily terminated by long alternating rows of strained and unstrained silicon dihydrides; no microfaceting or etching-induced surface roughness is observed. The Cartesian components of the infrared absorption spectrum of flat and vicinal etched surfaces show that the surface is almost entirely dihydride-terminated. This analysis disproves previous assignments of the infrared spectrum of NH4F-etched Si(100) which suggested that the etched surface was very rough and terminated by a variety of mono-, di-, and trihydride species. Although the steady-state etch morphology has lower interadsorbate strain than bulk-terminated H/Si(100), this morphology does not minimize interadsorbate strain as previously postulated. The relatively low reactivity of the strained dihydrides kinetically blocks this pathway.

A general method to maximize the information extracted from polarized surface absorption spectra is developed and applied to the study of etched Si(110) surfaces. In essence, this technique transforms spectra from the experimental reference frame, which is defined by the direction of the surface electric field during irradiation by s- and p-polarized light, into a more appropriate Cartesian reference frame defined by the surface normal and the plane of incidence. If the Cartesian reference frame is aligned with high symmetry directions of the system, significant spectral simplification can result. This analysis relies on the well-known boundary conditions on interfacial electric fields and is independent of any adsorbate screening or the effective dielectric constant of the adsorbate layer. The validity of this analysis is demonstrated on the spectra of NH4F-etched, H-terminated Si(110). The transition dipole moments of the symmetric and antisymmetric Si[Single Bond]H stretch modes associated with flat terraces are polarized along the [110] and [001] directions, respectively. Two additional modes with transition dipoles polarized along the [001] and [110] directions are assigned to defect species associated with microfaceting and other surface roughness. Data taken in two different experimental geometries are shown to be in excellent quantitative agreement, confirming the validity of the technique. Additionally, the measured adsorbate layer dielectric constant is in good agreement with previously reported values for hydrogen-terminated silicon surfaces.