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Oxygen-nitrogen complexes with the shallow donor characteristic represented by the effective mass theory were formed in Czochralski silicon (CZ Si) annealed in a nitrogen atmosphere. By fitting the depth profile of this defect to a diffusion equation, we estimated the nitrogen diffusion coefficient to be about 2×10−6 cm2/s at 1270 °C. This value is 105 times larger than that indicated by previously reported data.

In continuation of the work on ultra-violet band systems of the dlatomic group-IV(b) +VI(b) molecules, the band spectrum of SnTe has been obtained in emission by a heavy-current uncondensed discharge through a mixture of Sn, T e and ill in a silica discharge tube. About 45 bands have been observed and measured in the region AA3555 to 4235, of which 26 have been assigned to a main system A + X .

The electron spin resonance of defects formed in high-resistivity Czochralski silicon crystals annealed at 470·C were observed. Defects with C z " symmetry in nitrogen in-diffused crystals annealed for less than about 50 h were observed. With annealing for more than about 50 h, newelectron-spin-resonance (ESR) spectra made up of C 2 !1 and nearly isotropic defects were evident. Only nearly isotropic defects were observed in non-nitrogen-doped crystals. It is believed that defects with C 211 symmetry are oxygen-nitrogen complexes. Strong similarities between oxygen-nitrogen complex and previously reported NLlO, in terms of C Zv symmetry, g values, the dependence of g values on annealing time, the temperatures at which complexes are formed, the absence of hyperfine interactions in ESR measurement, and the character of shallow energy levels suggest that they may be the same defect.

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