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A new power device figure of merit is proposed for highfrequency applications. Based on a theoretid analysis, the impacts of circuit topologies and material properties are examined. This figure of merit is very useful in optimizing or choosing a power device operating in high-frequency circuits. A thin-film SO1 power MOSFET is taken as an example, and the effect of its device parameters on the power loss is analyzed to provide a basic guideline for optimization.

This paper describes switching characteristics of a thin-film silicon-on-insulator (SOI) power metal-oxide-semiconductor field-effect transistors (MOSFETs) based on the results of numerically simulating thin-film SOI power MOSFETs in the 50-V class. The dependence of the rise time and fall time on the doping concentration of the substrate, on the doping type of the substrate, and on the thickness of the buried oxide layer are studied. In addition, the optimum device structure of the thin-film SOI power MOSFET for high-frequency switching application is also described.

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