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In this paper, two kinds of E-plane microstrip-to-waveguide transitions are optimally designed and fabricated for combining output power from multiple small-power amplifiers in a WR-28 waveguide because conventional K connectors cause unnecessary insertion loss and adaptor loss. The transition design is based on target specifications such as a center frequency of 35 GHz, bandwidth of ±500 MHz, 0.1 dB insertion loss and 20 dB return loss. Performance variation caused by mechanical tolerance and assembly deviation is fully evaluated by three dimensional electromagnetic simulation. The fabricated back-to-back transitions with 16 mm and 26.57 mm interstage microstrip lines show insertion loss per transition of ～0.1 dB at 35 GHz and average 0.2 dB over full Ka band. Also the back-to-back transition shows return loss greater than 15 dB, which implies that the transition itself has return loss better than 20 dB.

A high-isolation Ka-band WR-28 waveguide power combiner is designed and implemented using a resistive septum. The waveguide power combiner developed here is an E-plane T-junction type with a TaN resistive septum inserted in a slit of waveguide junction. The fabricated waveguide power combiner shows a return loss better than -20 dB and an insertion loss less than 0.1 dB. Also the measurement shows isolation levels of 20 dB or more almost all over the band and in particular 25 dB or more below 37 GHz. The amplitude and phase imbalance are measured to be less than 0.1 dB and 2.5°, respectively.

In this paper, a Ka-band 8 W power amplifier module with WR-28 waveguide input and output ports is implemented and measured using four 2 W power amplifier modules and 4:1 waveguide power combiners with high isolation of 25 dB at 35 GHz. The 2 W power amplifier modules are fabricated using waveguide-to-microstrip transitions and show output power of 32.5～33.3 dBm and power gain of 26.9～28.7 dB at 35 GHz. Four 2 W power amplifier modules are combined through 4:1 waveguide power combiners with resistive septum and the combined power shows 39.0 dBm(8 W) under 6 V drain bias and 39.6 dBm(9.1 W) under 6.5 V drain bias at 35 GHz. , 국내의 경우 최근에서야 40 dBm 출력의 전력증폭기 모듈이 개발 되었다 [2] . 고출력 전력증폭기 모듈을 구현하기 위해 개별 MMIC 칩들을 알루미나(Alumina) 기판에서 전 력 합성하는 방법은 큰 마이크로스트립 전송 선로의

This paper presents a wideband Colpitts voltage controlled oscillator(VCO) with nanosecond startup time and a center frequency of 8.35 GHz for a new bubble-type motion detector that has a bubble-layer detection zone at the specific distance from itself. The VCO circuit consists of two parts; one is a negative resistance part with a HEMT device and Colpitts feedback structure and the other is a resonator part with a varactor diode and shorted shunt microstrip line. The shorted shunt microstrip line and series capacitor are utilized to compensate for the input reactance of the packaged HEMT that changes from capacitive values to inductive values at 8.1 GHz due to parasitic package inductance. By tuning the feedback capacitors which determine negative resistance values, this paper also investigates startup time improvement with the negative resistance variation and tuning bandwidth improvement with the reactance slope variation of the negative resistance part. The VCO measurement shows the tuning bandwidth of 2.3 GHz(28 %), the output power of 4.1～7.5 dBm and the startup time of less than 2 nsec.