We proposed two different time-dependent modeling approaches for variation of device characteristics of per-ovskite solar cells under stress conditions. The first approach follows Sah-Noyce-Shockley (SNS) model based on Shockley-Read-Hall recombination/generation across the depletion width of pn junction and the second approach is based on thermionic emission model for Schottky diodes. The connecting point of these approaches to time variation is the time-dependent defect generation in depletion width (W) of the junction. We have fitted the two models with experimental data reported in the literature to perovskite solar cell and found out that each model has a superior explanation for degradation of device metrics e.g. current density and efficiency by time under stress conditions. Nevertheless, the Sah-Noyce-Shockley model is more reliable than thermionic emission at least for solar cells.

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