Magnetic skyrmions are prime candidates for future spintronic devices. However, incorporating them as information carriers hinges on their interaction with defects ubiquitous in any device. Here we map from first-principles, the energy profile of single skyrmions interacting with single-atom impurities, establishing a generic shape as function of the defect’s electron filling. Depending on their chemical nature, foreign 3d and 4d transition metal adatoms or surface implanted defects can either repel or pin skyrmions in PdFe/Ir(111) thin films, which we relate to the degree of filling of bonding and anti-bonding electronic states inherent to the proximity of the non-collinear magnetic structure. Similarities with key concepts of bond theories in catalysis and surface sciences imbue the universality of the shape of the interaction profile and the potential of predicting its interaction. The resulting fundamental understanding may give guidance for the design of devices with surface implanted defects to generate and control skyrmions.

The viability of past, current and future devices for information technology hinges on their sensitivity to the presence of impurities. The latter can reshape extrinsic Hall effects or the efficiency of magnetoresistance effects, essential for spintronics, and lead to resistivity anomalies, the so-called Kondo effect. Here, we demonstrate that atomic defects enable highly efficient all-electrical detection of spin-swirling textures, in particular magnetic skyrmions, which are promising bit candidates in future spintronics devices. The concomitant impurity-driven alteration of the electronic structure and magnetic non-collinearity gives rise to a new spin-mixing magnetoresistance (XMR defect). Taking advantage of the impuritiesinduced amplification of the bare transport signal, which depends on their chemical nature, a defect-enhanced XMR (DXMR) is proposed. Both XMR modes are systematised for 3d and 4d transition metal defects implanted at the vicinity of skyrmions generated in PdFe bilayer deposited on Ir(111). The ineluctability of impurities in devices promotes the implementation of defect-enabled XMR modes in reading architectures with immediate implications in magnetic storage technologies.

Antiferromagnetic (AFM) skyrmions are envisioned as ideal localized topological magnetic bits in future information technologies. In contrast to ferromagnetic (FM) skyrmions, they are immune to the skyrmion Hall effect, might offer potential terahertz dynamics while being insensitive to external magnetic fields and dipolar interactions. Although observed in synthetic AFM structures and as complex meronic textures in intrinsic AFM bulk materials, their realization in non-synthetic AFM films, of crucial importance in racetrack concepts, has been elusive. Here, we unveil their presence in a row-wise AFM Cr film deposited on PdFe bilayer grown on fcc Ir(111) surface. Using first principles, we demonstrate the emergence of single and strikingly interpenetrating chains of AFM skyrmions, which can co-exist with the rich inhomogeneous exchange field, including that of FM skyrmions, hosted by PdFe. Besides the identification of an ideal platform of materials for intrinsic AFM skyrmions, we anticipate the uncovered knotted solitons to be promising building blocks in AFM spintronics.

We present a systematic first-principles study of the electronic surface states and resonances occuring in thin films of Pd of various thicknesses deposited on a single ferromagnetic monolayer (ML) of Fe on top of Ir(111) substrate. This system is of interest since one Pd layer deposited on Fe/Ir(111) hosts small magnetic skyrmions. The latter are topological magnetic objects with swirling spin-textures with possible implications in the context of spintronic devices since they have the potential to be used as magnetic bits for information technology. The stabilization, detection and manipulation of such noncollinear magnetic entities require a quantitative investigation and a fundamental understanding of their electronic structure. Here we investigate the nature of the unoccupied electronic states in Pd/Fe/ Ir(111), which are essential in the large spin-mixing magnetoresistance signature captured using non spin-polarized scanning tunneling microscopy (Crum et al 2015 Nat. Commun. 6 8541, Hanneken et al 2015 Nat. Nanotechnol. 10 1039). To provide a complete analysis, we investigate bare Fe/Ir(111) and Pd n=2,7 /Fe/Ir(111) surfaces. Our results demonstrate the emergence of surface and interface states after deposition of Pd MLs, which are strongly impacted by the large spin-orbit coupling of Ir surface.

Magnetic skyrmions are prime candidates as information carriers for spintronic devices due to their topological nature and nanometric size. However, unavoidable inhomogeneities inherent to any material leads to pinning or repulsion of skyrmions that, in analogy to biology concepts, define the phenotype of the skyrmion-defect interaction, generating complexity in their motion and challenging their application as future bits of information. Here, we demonstrate that atomby-atom manufacturing of multi-atomic defects, being antiferromagnetic or ferromagnetic, permits the breeding of their energy profiles, for which we build schematically a Punnet-square. As established from first-principles for skyrmions generated in PdFe bilayer on Ir(111) surface, the resulting interaction phenotype is rich. it can be opposite to the original one and eventually be of dual pinning-repulsive nature yielding energy landscapes hosting multi-domains. this is dictated by the stacking site, geometry, size and chemical nature of the adsorbed defects, which control the involved magnetic interactions. this work provides new insights towards the development of disruptive device architectures incorporating defects into their design aiming to control and guide skyrmions. Magnetic skyrmions 1,2 , i.e. non-collinear spin textures with particle-like properties, are promising future magnetic bits for future data storage technologies based on topological concepts 3-11. Of great technological relevance are skyrmions in thin films and magnetic multilayers 12-22 , which can be stabilized as a result of the competition among the Heisenberg exchange interaction (HEI), Dzyaloshinskii-Moriya interaction (DMI) 23,24 and the perpendicular magnetic anisotropy. The low spin polarized current thresholds required to manipulate skyrmions compared to typical ferromagnetic domain walls 3,25 along with their high mobility, high stability and small sizes make them ideal for achieving efficient and functional devices. However, defects that are ineluctable in any device and materials are often seen as inhibitors for applications. The dynamical behavior of the skyrmion motion as function of applied currents hinges on the presence of defects, which define the three motion regimes: pinning, creep-and steady-flow-motion as demonstrated experimentally in ultrathin heavy metal/ferromagnetic bilayers and multilayers 15,26,27. Considerable effort has been performed to explore the dynamics pertaining to current-induced skyrmion motion 3,4,15,28-32 , with a particular attention to the role of defects 33-36. In particular, simulations using realistic parameters extracted from ab-initio showed that by controlling the mutual distance of the pinning defects, one may engineer a double track to guide the skyrmion motion and enhance its velocity 36. Atomic-scale imaging based on scanning tunneling microscopy demonstrated that skyrmions in PdFe bilayer on Ir(111) are inert to the presence of a single Co adatom, in accordance to recent ab-initio simulations 34 , but react to the presence...