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Remote plasma sources (RPSs) are being developed for low damage materials processing during semiconductor fabrication. Plasmas sustained in NF3 are often used as a source of F atoms. NF3 containing gas mixtures such as NF3/O2 and NF3/H2 provide additional opportunities to produce and control desirable reactive species such as F and NO. In this paper, results from computational investigations of RPS sustained in capacitively coupled plasmas are discussed using zero-dimensional global and two-dimensional reactor scale models. A comprehensive reaction mechanism for plasmas sustained in Ar/NF3/O2 was developed using electron impact cross sections for NF2 and NF calculated by ab initio molecular R-matrix methods. For validation of the reaction mechanism, results from the simulations were compared with optical emission spectroscopy measurements of radical densities. Dissociative attachment and dissociative excitation of NFx are the major sources of F radicals. The exothermicity from these Franck–Condon dissociative processes is the dominant gas heating mechanism, producing gas temperatures in excess of 1500 K. The large fractional dissociation of the feedstock gases enables a larger variety of end-products. Reactions between NFx and O atom containing species lead to the formation of NO and N2O through endothermic reactions facilitated by the gas heating, followed by the formation of NO2 and FNO from exothermic reactions. The downstream composition in the flowing afterglow is an ion–ion plasma maintained by, in oxygen containing mixtures, [F−] ≈ [NO+] since NO has the lowest ionization potential and F has the highest electron affinity among the major neutral species.

Remote plasma sources (RPSs) are being investigated to produce fluxes of radicals for low damage material processing. In this computational investigation, the properties of a RPS etching system are discussed where an Ar/NF3/O2 gas mixture is flowed through an inductively coupled plasma source into a downstream chamber containing a silicon nitride coated wafer. The plasma is largely confined in the RPS due to the highly attaching NFx (x = 1–3) and an isolating showerhead although a weak ion-ion plasma maintained by [NO+] ≈ [F−] leaks into the downstream chamber. The etching of silicon nitride proceeds through iterative removal of Si and N subsites by isotropic thermal neutrals. When the fluxes to the wafer are rich in fluorine radicals, the etch rate is limited by the availability of NO molecules and N atoms which remove N subsites. As power deposition increases with continuous-wave excitation, the etch rate increases almost linearly with the increasing fluxes of NO and N atoms, as production of NO through endothermic reactions is aided by increasing gas temperature. Production of N atoms through electron impact dissociation of NO and NFx is aided by the increasing electron density. Similar trends occur when increasing the duty cycle during pulsed excitation. Addition of a plenum between the RPS and the downstream chamber aids in lateral diffusion of radicals before passing through the final showerhead and improves the uniformity of etching.

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