No abstract

In situ silicon-wafer temperature measurements during RF argon-ion plasma etching are reported for four different wafer cooling environments: (i) lying on the electrode; (ii) clamped to the electrode; with additional helium gas between wafer and electrode in both (i) and (ii), in order to enhance heat transfer. Fluoroptic thermometry is applied to measure the local surface temperature of the wafer during plasma processing. The measured heating and cooling curves can be fitted using a model which considers conductive heat losses only. Deviations are observed when high RF power is applied and surface temperatures higher than 120 degrees C are reached. The authors report on effective cooling via helium gas of the rear side of the wafer which is lying on an electrode without any clamping.

No abstract

Selective excitation of coupled CO vibrations on a dissipative Cu(100) surface by shaped infrared laser pulses

Infrared spectra of thin films of polyperfluoroethers on metal and silicon dioxide surfaces were obtained for films with thicknesses between 1 and 1000 nm by p-polarized reflection and modulated polarization techniques. Changes in frequencies and relative intensities of vibrational peaks with film thickness suggest that the conformation of liquid polymers on surfaces is unlike bulk conformation, with polymer chains extended preferentially along the surface.