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ams AG is a global leader in the design and manufacture of advanced sensor solutions, which are at the heart of the products and technologies that define our world today -from smartphones and mobile devices to smart homes and buildings, industrial automation, medical technology and connected vehicles. To build global leadership in optical sensing, ams is driving integration of sensor technologies into monolithically integrated solutions. This paper will provide an overview of ams' integrated photosensor concepts including 3D integration, spectral sensing and radiation hard concepts. PoS(ICHEP2018)462Monolithic Integrated Photosensors I. Jonak-Auer et al.2 1. Introduction ams AG designs and manufactures high-performance sensor solutions for applications requiring the highest level of miniaturization, integration, accuracy, sensitivity and lower power. Our comprehensive solutions take sensing to the next level by providing a seamless interface between humans and technology. Products include sensor solutions, sensor ICs, interfaces and related software for mobile, consumer, communications, industrial, medical, and automotive markets. For ams AG innovation in sensor-and integration technology as well as in microelectronics is mandatory for building high performance integrated systems. With the ongoing miniaturization of CMOS technologies the need for integrated optical sensors on smaller scale CMOS nodes arises. In the following paragraphs recent ams AG developments in optical sensor technologies including integration concepts of different optoelectronic modules, filter and antireflective coatings (ARCs) as well as 3D integration using Through Silicon Vias (TSVs) are reported.

Universal pin photodiodes combine low capacitance with high bandwidth and high responsivity. A speed improvement is achieved for a pin finger photodiode in a high-speed 0.35 mm SiGe heterojunction bipolar transistor (HBT) BiCMOS technology. The cathode finger structure results in a high responsivity of 0.2 A/W (quantum efficiency 61%) for 410 nm light and a bandwidth of 1253 MHz at a reverse bias voltage of 3 V. Owing to the thick low doped intrinsic epitaxial layer, high bandwidths and high dynamic quantum efficiencies result for a wide spectrum of optical wavelengths from ultraviolet and blue to red and near-infrared.Introduction: Optoelectronic integrated circuits (OEICs) are indispensible in various control, multimedia and imaging applications, which require single-chip solutions. Blu-ray optical disc storage systems demand short-wavelength light (410 nm) in order to increase the storage capacity. In conventional pn-or pin-photodiodes with a noninterdigitated n þ -surface cathode, a large portion of the incident UV photons is absorbed in the quasi-neutral region within the n þ -cathode owing to the low penetration depth. Within e.g. 0.1 mm of silicon more than 70% of incident 400 nm light is absorbed [1]. In the highdoped n þ -cathode with a thickness of about 0.2 mm, the low carrier mobility, the low carrier diffusion constant and the short carrier lifetime lead to strong recombination of photogenerated carriers, which results in a low quantum efficiency for blue and UV light. To increase the quantum efficiency for blue and UV light, therefore, the n þ -cathode is interdigitated and we call this device a finger photodiode. Between the n þ -fingers, the doping concentration is low, carrier mobility is high, carrier lifetime is long and carrier recombination is low. To improve the bandwidth and the dynamic quantum efficiency further, the doping between the n þ -fingers is reduced from the standard substrate doping to below 10 14 cm 23 in order to extend the space-charge region laterally (plus vertically) and allow for complete depletion between the fingers already at several volts reverse bias. The lower the doping level between the fingers, the wider the space between the n þ -fingers can be and the less carrier recombination within the n þ -cathode fingers happens. A too large finger distance, however, will reduce the bandwidth owing to incomplete depletion. Realising the low doped region with a thick low-doped epitaxial layer reduces carrier diffusion from the substrate for red and near-infrared light. In such a way, a universal photodiode with high bandwidths (due to vertical and lateral carrier drift) and high quantum efficiency in a wide spectral range from at least 400 to 850 nm is achieved.

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