Articles you may be interested inCross-sectional dopant profiling and depletion layer visualization of SiC power double diffused metal-oxidesemiconductor field effect transistor using super-higher-order nonlinear dielectric microscopy A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxidesemiconductor field-effect transistors Influence of bulk bias on negative bias temperature instability of p -channel metal-oxide-semiconductor fieldeffect transistors with ultrathin SiON gate dielectrics J. Appl. Phys. 99, 064510 (2006); 10.1063/1.2183409 Drive current enhancement in p -type metal-oxide-semiconductor field-effect transistors under shear uniaxial stress Appl. Phys. Lett. 85, 6188 (2004); 10.1063/1.1841452Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors n-channel power vertical double-diffused metal-oxide-semiconductor field-effect-transistor (VDMOSFET) devices were subjected to a high electric field stress or to a x-ray radiation. The current-voltage and capacitance-voltage measurements show that the channel-side interface and the drain-side interface are affected differently in the case of high electric field stress, whereas the interfaces are nearly uniformly affected in the case of x-ray radiation. This paper also shows that for the gated diode structure of VDMOSFET, the direct-current current-voltage technique measures only the drain-side interface; the subthreshold current-voltage technique measures only the channel-side interface; and the capacitance-voltage technique measures both interfaces simultaneously and clearly distinguishes the two interfaces. The capacitance-voltage technique is suggested to be a good quantitative method to examine both interface regions by a single measurement.