Self-organized nanostructures that provide antireflection properties grow on PMMA caused by plasma ion etching. A new procedure uses a thin initial layer prior to the etching step. Different types of antireflective structures can now be produced in a shorter time and with fewer limitations on the type of polymer that can be used. The durability of the structured surfaces can be improved by the deposition of additional thin films.

The generation of nanostructures by initial layer deposition and plasma etching offers a simple and cost‐effective method for imparting broadband anti‐reflection properties to polymer optics. In this study, we have investigated the possibility of controlling the structure growth on the cycloolefin polymer Zeonex®. It has been found that the geometry of the emerging nanostructures can be adjusted from “island‐like,” through “sponge‐like,” to “pinholes” merely by changing the thickness of the initial layer before the etching step. However, not all structure types provided a satisfactory transmittance enhancement. Only when the initial layer thickness and the etching time were matched in such a way that a certain material/air filling factor range and a sufficient structure depth were obtained could an outstanding anti‐reflection effect be realized.

A new technology based on plasma etching has been developed to produce antireflective surface structures. By choosing thin initial layers and variable plasma conditions, a broad range of nanostructures can be obtained on various polymers. A broadband antireflective effect can be achieved that is less sensitive to the incident angle of light compared to multilayer interference coatings. Thin layers of silica help in mechanical protection, especially if the structured surface is nearly enclosed by the protection layer. In addition, surfaces that show both antireflective properties and an antifoggling effect have been prepared. Combinations of SiO2 and fluorine-containing layers were found to be useful in obtaining super-hydrophobic behavior. This advanced plasma etching is not limited to a special plasma source and the suitability of different plasma sources is discussed

No abstract