Molecular nonlinear optical (NLO) crystals feature important advantages compared to inorganic counterparts, such as low dielectric constants, ultrafast response times, and large electro‐optic coefficients. Conjugated push–pull chromophores connecting electron‐donating with accepting groups are often employed in the design of these crystals. However, associated large molecular dipole moments induce antiparallel or centrosymmetric conformations in the solid‐state, which leads to NLO inactivity. The cation–anion hydrogen bond interactions of a hydroxy‐piperidino electron donor group are combined with increased van der Waals volume effects induced by an ethyl modification of the electron‐accepting moiety. This produces non‐centrosymmetric packing in the organic salt EHPSI‐4NBS ((E)‐1‐ethyl‐2‐(4‐(4‐(hydroxymethyl)piperidin‐1‐yl)styryl)‐3,3‐dimethyl‐3H‐indol‐1‐ium 4‐nitrobenzenesulfonate). Converting a methyl group into ethyl changes the packing symmetry in the molecular crystal to switch on NLO activity. This behavior is attributed to the increased size of the ethyl group, which pushes apart the van der Waals contacts of the cation that lead to centrosymmetric packing in the methyl derivative. To test the NLO properties of EHPSI‐4NBS, THz generation experiments are performed at 1200 nm pump wavelength. Spectral amplitude similar to DAST ((E)‐4‐(4‐(dimethylamino)styryl)‐1‐methylpyridin‐1‐ium tosylate) crystal is observed with generation profile from 0 to 3.8 THz.

No abstract

We characterize the THz generation of N-benzyl-2-methyl-4-nitroaniline (BNA), with crystals ranging in thickness from 123-700 μm. We compare excitation using 1250-1500-nm and 800-nm wavelengths. Pumping BNA with both 800-nm wavelengths and longer near-infrared wavelengths results in a broad spectrum, producing out to 6 THz using a 100-fs pump, provided the BNA sample is thin enough. ~200 μm or thinner crystals are required to produce a broad spectrum with an 800-nm pump, whereas ~300 μm crystals are optimal for broadband THz generation using the longer wavelengths. We report the favorable THz generation and optical characteristics of our BNA crystals that make them attractive for broadband, highfield THz generation, and we also find significant differences to BNA results reported in other works.

The organic terahertz (THz) generation crystal BNA has recently gained traction as a valuable source to produce broadband THz pulses. Even when pumped with 800-nm light, thin BNA crystals can produce relatively high electric fields with frequency components out to 5 THz. However, the THz output when pumped with 800-nm light is limited by the damage threshold of the organic crystal. Here we report that the damage threshold of BNA can be significantly improved by physically bonding BNA to a high-thermal conductivity sapphire window. When pumped with 800-nm light from an amplified Ti:sapphire laser system, our bonded BNA (BNA-sapphire) generates 2.5× higher electric field strengths compared to bare BNA crystals. We characterize the average damage threshold for bare BNA and BNA-sapphire, measure peak-to-peak electric field strengths and THz waveforms, and determine the nonlinear transmission in BNA. Pumping BNA-sapphire with 800-nm light results in peak-to-peak electric fields exceeding 1 MV/cm, with strong broadband frequency components from 0.5-5 THz. Our BNA-sapphire THz source is a promising alternative to tilted pulse front LiNbO3 THz sources, which will enable many research groups without optical parametric amplifiers to perform high-field, broadband THz spectroscopy.

No abstract